This practice quiz has been created for the students taking Electronic Materials (EE 3903) course offered in Spring 2015 in the Department of Electrical Engineering at Kennesaw State University. The quiz aims to help self evaluate student's preparation on the understanding of the subject matter in an efficient way and does NOT contribute to the final grade.
A copper atom is replaced by a zinc atom
A zinc atom is replaced by a copper atom
Sulfur atoms replace both copper and zinc atoms
Tin atoms replace both copper and zinc atom
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A is more electronegative than B
B is more electronegative than A
Both A and B have same electronegativity
Both A and B must be metals
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Simple Cubic
Face Centered Cubic
Body Centered Cubic
Diamond
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Zero dimensional defect
One dimensional defect
Two dimensional defect
Three dimensional defect
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Do not interfere at all
Are completely out of phase
Make constructive interference
Make destructive interference
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3
4
5
6
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Mobility increases
Drift velocity increases
Conductivity increases
All of the above
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Within the bandgap and very close to the valence band
Within the bandgap and very close to the conduction band
Within the bandgap and away from both conduction and valence bands
Above the conduction band
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Lattice parameters
Residual Strain
Crystallinity
All of the above
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Point defect
Line defect
Surface/Plane defect
Volume defect
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Decreases
Increases
Remains constant
Increases till 300K and then decreases
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Atoms vibrating due to thermal energy
Impurity atoms present in the crystal
Defects present in the crystal
All of the above
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Applied magnetic field
Injected current
Hall coefficient
All of the above
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Optical properties
Electronic properties
Mechanical properties
All of the above
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Paramagnetic
Ferrimagnetic
Ferromagnetic
Diamagnetic
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6
2
4
8
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Equal to the 1st ionization energy
Less than the 1st ionization energy
Higher than the 1st ionization energy
A universal constant for all elements
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(111)
(001)
(100)
(010)
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Broad peaks
Sharp peaks
Large number of closely spaced peaks
Showing only (100) and (111) peaks
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Zero dimensional defect
One dimensional defect
Two dimensional defect
Three dimensional defect
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A has relatively smaller grains
B has relatively larger grains
A has more grains per unit area
B has more grains per unit area
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CBM and VBM mismatch in the k-space
Ideal for optoelectronic devices (such as LEDs)
Recombination process is mediated by phonons
Recombination process is inefficient
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Increase
Decrease
Does not change
Increases from 0K-273K, then decreases
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Increases
Decreases
Remains same
Rapidly increases
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Metal B has higher thermal conductivity
Metal A has higher thermal conductivity
There is no relation between electrical & thermal conductivity of metals
Thermal conductivity of Metal A is exactly half of metal B
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Superconductor
Diamagnetic material
Antiferromagnetic material
Paramagnetic material
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50 Hz
60 Hz
100 Hz
25 Hz
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High Coercivity
Large area within the hysteresis loop
Low coercivity
Low remenance
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Increase magnetization
Increase saturation flux density
Decrease magnetostatic energy
Decrease hysteresis loss
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