Ee 3903: Electronic Materials - Practice Quiz I
This practice quiz has been created for the students taking Electronic Materials (EE 3903) course offered in Spring 2015 in the Department of Electrical Engineering at Kennesaw State University. The quiz aims to help self evaluate student's preparation on the understanding of the subject matter in an efficient way and does NOT contribute to the final grade.
- 1.Which of the following can NOT be determined from the Hall measurement?
- A.
Carrier mobility
- B.
Carrier type
- C.
Carrier lifetime
- D.
Carrier concentration
- 2.Consider a CuZn antisite defect formed in a CZTS film. Here CuZn means –
- A.
A copper atom is replaced by a zinc atom
- B.
A zinc atom is replaced by a copper atom
- C.
Sulfur atoms replace both copper and zinc atoms
- D.
Tin atoms replace both copper and zinc atom
- 3.For a non-polar covalent bond between two atoms A and B, which of the following is true?
- A.
A is more electronegative than B
- B.
B is more electronegative than A
- C.
Both A and B have same electronegativity
- D.
Both A and B must be metals
- 4.Si has the following crystal structure:
- A.
Simple Cubic
- B.
Face Centered Cubic
- C.
Body Centered Cubic
- D.
Diamond
- 5.Edge Dislocation is a –
- A.
Zero dimensional defect
- B.
One dimensional defect
- C.
Two dimensional defect
- D.
Three dimensional defect
- 6.In XRD pattern, we observe a peak when scattered X-rays from the atoms in the crystal –
- A.
Do not interfere at all
- B.
Are completely out of phase
- C.
Make constructive interference
- D.
Make destructive interference
- 7.Atomic number of Phosphorus is 15. The number of valence electrons in Phosphorus is –
- A.
3
- B.
4
- C.
5
- D.
6
- 8.If the mean scattering time of electrons in a metal increases, then –
- A.
Mobility increases
- B.
Drift velocity increases
- C.
Conductivity increases
- D.
All of the above
- 9.A deep level impurity creates an electronic energy level at the following position –
- A.
Within the bandgap and very close to the valence band
- B.
Within the bandgap and very close to the conduction band
- C.
Within the bandgap and away from both conduction and valence bands
- D.
Above the conduction band
- 10.Which of the following information can be obtained by X-ray diffraction (XRD) analysis of a crystalline solid?
- A.
Lattice parameters
- B.
Residual Strain
- C.
Crystallinity
- D.
All of the above
- 11.Grain boundary is a –
- A.
Point defect
- B.
Line defect
- C.
Surface/Plane defect
- D.
Volume defect
- 12.With the increase in temperature, the concentration of vacancies in a crystalline solid –
- A.
Decreases
- B.
Increases
- C.
Remains constant
- D.
Increases till 300K and then decreases
- 13.Electrons in a crystal could be scattered by –
- A.
Atoms vibrating due to thermal energy
- B.
Impurity atoms present in the crystal
- C.
Defects present in the crystal
- D.
All of the above
- 14.Hall voltage increases with the increase of –
- A.
Applied magnetic field
- B.
Injected current
- C.
Hall coefficient
- D.
All of the above
- 15.Defects in a crystalline solid can influence:
- A.
Optical properties
- B.
Electronic properties
- C.
Mechanical properties
- D.
All of the above
- 16.Which of the following material can achieve highest magnetization?
- A.
Paramagnetic
- B.
Ferrimagnetic
- C.
Ferromagnetic
- D.
Diamagnetic
- 17.Maximum number of electrons allowed in the L Shell:
- A.
6
- B.
2
- C.
4
- D.
8
- 18.The 2nd ionization energy is:
- A.
Equal to the 1st ionization energy
- B.
Less than the 1st ionization energy
- C.
Higher than the 1st ionization energy
- D.
A universal constant for all elements
- 19.
What is the miller indices of the following crystal plane (shaded)?- A.
(111)
- B.
(001)
- C.
(100)
- D.
(010)
- 20.Which of the following XRD characteristic signifies a higher degree of crystallinity?
- A.
Broad peaks
- B.
Sharp peaks
- C.
Large number of closely spaced peaks
- D.
Showing only (100) and (111) peaks
- 21.Screw dislocation is a –
- A.
Zero dimensional defect
- B.
One dimensional defect
- C.
Two dimensional defect
- D.
Three dimensional defect
- 22.Two different polycrystalline materials A and B has grain size numbers of 3 and 5 respectively. Which of the following is true?
- A.
A has relatively smaller grains
- B.
B has relatively larger grains
- C.
A has more grains per unit area
- D.
B has more grains per unit area
- 23.Which of the following is NOT correct for indirect bandgap semiconductors?
- A.
CBM and VBM mismatch in the k-space
- B.
Ideal for optoelectronic devices (such as LEDs)
- C.
Recombination process is mediated by phonons
- D.
Recombination process is inefficient
- 24.In a metal, as temperature is increased, mobility of the electrons –
- A.
Increase
- B.
Decrease
- C.
Does not change
- D.
Increases from 0K-273K, then decreases
- 25.If frequency increases, the skin depth of a metal conductor –
- A.
Increases
- B.
Decreases
- C.
Remains same
- D.
Rapidly increases
.PNG "What is the miller indices of the following crystal plane (shaded)?")
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