Resistor-like properties of metal oxides.
Variable conductive properties of some materials.
The fact that electrons conduct better than holes.
Insulating properties of silicon and GaAs.
Lower working voltage
Ability to withstand high voltage spikes
The charge carriers move fast.
The material does not react to ionizing radiation.
They can be damaged by electrostatic discharges.
They must always be used at high frequencies.
RF power amplifiers.
Can only work at low frequencies.
Requires very little power to function.
Requires considerable power to function.
Can only work at high frequencies.
Make the charge carriers move faster.
Cause holes to flow.
Give a semiconductor material specific properties.
Protect devices from damage in case of transients.
Adding an acceptor impurity.
Adding a donor impurity.
Taking neutrons away.
The material becomes P type.
Current flows mainly in the form of holes.
Most of the carriers have positive electric charge.
The substance acquires an electron surplus.
The majority carriers.
The minority carriers.
Minus to plus.
Plus to minus.
P-type to N-type material.
N-type to P-type material.
Reverse-biased at a voltage less than the avalanche voltage.
Biased past the breaker voltage.
In a state of avalanche effect.
Charge carriers flow continuously.
They have opposite electric charge.
They have the same electric charge.
Forget it! Holes flow in the same direction as electrons.
A charge of −1 unit.
A charge of +1 unit.
A charge that depends on the semiconductor type.
The applied voltage exceeds the forward breakover voltage.
The applied voltage is less than the forward breakover voltage.
The junction capacitance is high enough.
The depletion region is wide enough.
The junction will be destroyed.
The junction will insulate; no current will flow.
The junction will conduct current.
The capacitance will become extremely low.
The cross-sectional area of the P-N junction
The width of the depletion region
The phase of an applied ac signal
The reverse-bias voltage