Ee 2401: Semiconductor Devices - Practice Quiz I

30 Questions | Total Attempts: 109

SettingsSettingsSettings
Ee 2401: Semiconductor Devices - Practice Quiz I - Quiz

This practice quiz has been created by Dr. Sandip Das for the students taking Semiconductor Devices (EE 2401) course in the Department of Electrical Engineering at Kennesaw State University. The quiz aims to help self evaluate student's preparation on the understanding of the subject matter in an efficient way and does NOT contribute to the final grade.


Questions and Answers
  • 1. 
    Which of the following crystal structure has highest atomic packing fraction (APF)?
    • A. 

      Simple Cubic

    • B. 

      Face Centered Cubic (FCC)

    • C. 

      Body Centered Cubic (BCC)

    • D. 

      All of the above have same APF

  • 2. 
    In a Simple Cubic structure, the lattice parameters are:
    • A. 
    • B. 
    • C. 

      Option 3

    • D. 
  • 3. 
    Si has the following crystal structure:
    • A. 

      Simple Cubic

    • B. 

      Face Centered Cubic

    • C. 

      Body Centered Cubic

    • D. 

      Diamond

  • 4. 
    An electric field is applied across a semiconductor sample. Which of the following is true?
    • A. 

      Electrons will move along the direction of the electric field

    • B. 

      Holes will move against the direction of the electric field

    • C. 

      Electrons will move perpendicular to the electric field

    • D. 

      Electrons will move against the direction of the electric field

  • 5. 
    In the Ternary Compound Semiconductor AlxGa1-xAs, the value of  lies in the range:
    • A. 
    • B. 
    • C. 
    • D. 
  • 6. 
    Consider the free electron concentration in an intrinsic semiconductor sample at temperature T1 is n1. When the temperature is increased to T2, the free electron concentration is found to be n2. Which one of the following is true?
    • A. 
    • B. 
    • C. 

      5

    • D. 

      6

  • 7. 
    Identify the correct order of the each type of solid shown below:
    • A. 

      (A) Polycrystalline, (B) Amorphous, (C) Single Crystal

    • B. 

      (A) Single Crystal, (B) Amorphous, (C) Polycrystalline

    • C. 

      (A) Amorphous, (B) Polycrystalline, (C) Single Crystal

    • D. 

      (A) Single Crystal, (B) Polycrystalline, (C) Amorphous

  • 8. 
    In an intrinsic semiconductor, the hole concentration is:  
    • A. 

      Equal to the atomic concentration

    • B. 

      Equal to the free electron concentration

    • C. 

      Higher than the free electron concentration

    • D. 

      Lower than the free electron concentration

  • 9. 
    The Fermi level in a Boron-doped Si sample would be –
    • A. 

      Closer to the conduction band edge

    • B. 

      Above the conduction band edge

    • C. 

      Closer to the valence band edge

    • D. 

      Below the valence band edge

  • 10. 
    The free electron concentration in a semiconductor material depends on –
    • A. 

      The effective density of states in the conduction band

    • B. 

      Temperature

    • C. 

      The Fermi level

    • D. 

      All of the above

  • 11. 
    With increasing reverse bias, width of the depletion region in a p-n junction diode will – 
    • A. 

      Decrease

    • B. 

      Increase

    • C. 

      Remain same

    • D. 

      Becomes zero

  • 12. 
    Which of the following is an indirect bandgap semiconductor?
    • A. 

      CdTe

    • B. 

      GaAs

    • C. 

      Si

    • D. 

      InP

  • 13. 
    The depletion region of a p-n junction is depleted of –
    • A. 

      Atoms

    • B. 

      Immobile charge carriers

    • C. 

      Phonons

    • D. 

      Mobile charge carriers

  • 14. 
    What is the miller indices of the following crystal plane (shaded)?   
    • A. 

      (111)

    • B. 

      (001)

    • C. 

      (100)

    • D. 

      (010)

  • 15. 
    Measured bandgap of an unknown material is found to be 8.2 eV. At room temperature, the material is expected to be – 
    • A. 

      A semiconductor

    • B. 

      A metal

    • C. 

      An insulator

    • D. 

      A superconductor

  • 16. 
    Current due to the concentration gradient of charge carriers is called –
    • A. 

      Concentrated current

    • B. 

      Drift current

    • C. 

      Diffusion current

    • D. 

      Eddy current

  • 17. 
    In a p-n junction diode, doping concentration in the n-side (ND) is higher than the doping concentration in the p-side (NA). xn and xp denote the depletion width in the n- and p-sides, respectively. Which one of the following is correct?
    • A. 
    • B. 
    • C. 
    • D. 
  • 18. 
    At T>0K, the probability of finding an electron at the Fermi energy level is –
    • A. 

      1

    • B. 

      1/3

    • C. 

      1/4

    • D. 

      1/2

  • 19. 
    If the segregation coefficient of an impurity, k0 = 1; then the Czochralski grown crystal would have –
    • A. 

      Higher impurity concentration at the middle of the ingot

    • B. 

      Uniform impurity concentration throughout the ingot

    • C. 

      Higher impurity concentration at the top of the ingot

    • D. 

      Higher impurity concentration at the bottom of the ingot

  • 20. 
    With increase in reverse bias, the depletion capacitance –
    • A. 

      Increases

    • B. 

      Decreases

    • C. 

      Remains unchanged

    • D. 

      Becomes zero

  • 21. 
    In a p-n junction diode, which of the following phenomena is responsible for forward current flow (under forward bias)?
    • A. 

      Thermionic emission

    • B. 

      Tunneling

    • C. 

      Minority carrier injection

    • D. 

      All of the above

  • 22. 
    Which of the following metal will result in a Schottky contact with a p-type semiconductor?
    • A. 
    • B. 
    • C. 
    • D. 

      All of the above

  • 23. 
    Under reverse bias across a Schottky junction with ultra-thin barrier-width, which of the following quantum-mechanical phenomena is responsible for current conduction?
    • A. 

      Avalanche multiplication

    • B. 

      Tunneling

    • C. 

      Thermionic emission

    • D. 

      Recombination

  • 24. 
    How many Bravais lattices are possible?
    • A. 

      20

    • B. 

      12

    • C. 

      10

    • D. 

      14

  • 25. 
    Which crystal growth technique is most widely employed for commercial Si wafer production?
    • A. 

      Czochralski

    • B. 

      Float Zone

    • C. 

      Bridgman

    • D. 

      All of the above

Back to Top Back to top