Ee 2401: Semiconductor Devices - Practice Quiz

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Questions: 30 | Attempts: 207 | Updated: Mar 11, 2024

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Ee 2401: Semiconductor Devices - Practice Quiz - Quiz

Welcome to our Semiconductor Devices Quiz! This quiz is designed to test your knowledge and understanding of semiconductor devices, which are the building blocks of modern electronics. Semiconductor devices play a crucial role in various applications, from consumer electronics to advanced industrial systems.

This practice quiz has been created by Dr. Sandip Das for the students taking Semiconductor Devices (EE 2401) course in the Department of Electrical Engineering at Kennesaw State University. The quiz aims to help self evaluate student's preparation on the understanding of the subject matter in an efficient way and does NOT contribute to the final grade. Read more
In this quiz, you'll encounter questions covering a wide range of topics related to semiconductor devices, including diodes, transistors, integrated circuits, and more. You'll have the opportunity to demonstrate your understanding of semiconductor physics, device characteristics, and practical applications.
Expect questions that challenge your comprehension of semiconductor device operation, characteristics, and performance metrics. By completing this quiz, you'll not only test your current knowledge but also identify areas for further study and improvement.

Semiconductor Devices Questions and Answers

Matt Balanda |BS, Science |

Physics Expert

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Current Version
Mar 11, 2024

Quiz Edited by
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Expert Reviewed by
Matt Balanda
Mar 17, 2015

Quiz Created by
EE3903

Ee 2401: Semiconductor Devices - Practice Quiz

Semiconductor Devices Questions and Answers

Which of the following crystal structures has the highest atomic packing fraction (APF)?

In a Simple Cubic structure, the lattice parameters are:

Si has the following crystal structure:

An electric field is applied across a semiconductor sample. Which of the following is true?

In the Ternary Compound Semiconductor Al_xGa_1-xAs, the value of lies in the range:

Consider the free electron concentration in an intrinsic semiconductor sample at temperature T1 is n1. When the temperature is increased to T2, the free electron concentration is found to be n2. Which one of the following is true?

Identify the correct order of the each type of solid shown below:

In an intrinsic semiconductor, the hole concentration is:

The Fermi level in a Boron-doped Si sample would be –

The free electron concentration in a semiconductor material depends on –

With increasing reverse bias, width of the depletion region in a p-n junction diode will –

Which of the following is an indirect bandgap semiconductor?

The depletion region of a p-n junction is depleted of –

What are the miller indices of the following crystal plane (shaded)?

Measured bandgap of an unknown material is found to be 8.2 eV. At room temperature, the material is expected to be –

Current due to the concentration gradient of charge carriers is called –

In a p-n junction diode, doping concentration in the n-side (N_D) is higher than the doping concentration in the p-side (N_A). x_n and x_p denote the depletion width in the n- and p-sides, respectively. Which one of the following is correct?

At T>0K, the probability of finding an electron at the Fermi energy level is –

If the segregation coefficient of an impurity, k₀ = 1; then the Czochralski grown crystal would have –

With increase in reverse bias, the depletion capacitance –

In a p-n junction diode, which of the following phenomena is responsible for forward current flow (under forward bias)?

Which of the following metals will result in a Schottky contact with a p-type semiconductor?

Under reverse bias across a Schottky junction with ultra-thin barrier-width, which of the following quantum-mechanical phenomena is responsible for current conduction?

How many Bravais lattices are possible?

Which crystal growth technique is most widely employed for commercial Si wafer production?

Drift current flowing through a sample of n-type semiconductor will depend on –

If the segregation coefficient of an impurity, k₀ < 1; then the Czochralski grown crystal would have –

Reverse saturation current of a Schottky diode depends on –

To obtain a high Schottky barrier height, which of the following options would you choose?

1 eV =

Ee 2401: Semiconductor Devices - Practice Quiz

Semiconductor Devices Questions and Answers

Which of the following crystal structures has the highest atomic packing fraction (APF)?

In a Simple Cubic structure, the lattice parameters are:

Si has the following crystal structure:

An electric field is applied across a semiconductor sample. Which of the following is true?

In the Ternary Compound Semiconductor AlxGa1-xAs, the value of lies in the range:

Consider the free electron concentration in an intrinsic semiconductor sample at temperature T1 is n1. When the temperature is increased to T2, the free electron concentration is found to be n2. Which one of the following is true?

Identify the correct order of the each type of solid shown below:

In an intrinsic semiconductor, the hole concentration is:

The Fermi level in a Boron-doped Si sample would be –

The free electron concentration in a semiconductor material depends on –

With increasing reverse bias, width of the depletion region in a p-n junction diode will –

Which of the following is an indirect bandgap semiconductor?

The depletion region of a p-n junction is depleted of –

What are the miller indices of the following crystal plane (shaded)?

Measured bandgap of an unknown material is found to be 8.2 eV. At room temperature, the material is expected to be –

Current due to the concentration gradient of charge carriers is called –

In a p-n junction diode, doping concentration in the n-side (ND) is higher than the doping concentration in the p-side (NA). xn and xp denote the depletion width in the n- and p-sides, respectively. Which one of the following is correct?

At T>0K, the probability of finding an electron at the Fermi energy level is –

If the segregation coefficient of an impurity, k0 = 1; then the Czochralski grown crystal would have –

With increase in reverse bias, the depletion capacitance –

In a p-n junction diode, which of the following phenomena is responsible for forward current flow (under forward bias)?

Which of the following metals will result in a Schottky contact with a p-type semiconductor?

Under reverse bias across a Schottky junction with ultra-thin barrier-width, which of the following quantum-mechanical phenomena is responsible for current conduction?

How many Bravais lattices are possible?

Which crystal growth technique is most widely employed for commercial Si wafer production?

Drift current flowing through a sample of n-type semiconductor will depend on –

If the segregation coefficient of an impurity, k0 < 1; then the Czochralski grown crystal would have –

Reverse saturation current of a Schottky diode depends on –

To obtain a high Schottky barrier height, which of the following options would you choose?

1 eV =

In the Ternary Compound Semiconductor Al_xGa_1-xAs, the value of lies in the range:

In a p-n junction diode, doping concentration in the n-side (N_D) is higher than the doping concentration in the p-side (N_A). x_n and x_p denote the depletion width in the n- and p-sides, respectively. Which one of the following is correct?

If the segregation coefficient of an impurity, k₀ = 1; then the Czochralski grown crystal would have –

If the segregation coefficient of an impurity, k₀ < 1; then the Czochralski grown crystal would have –