Plasma-therm Icp Metal Dry Etch Tool Quiz

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| By Mary Tang
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Mary Tang
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Quizzes Created: 1 | Total Attempts: 312
| Attempts: 312
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  • 1/13 Questions

    If a certain material is not listed in the “Table of Available Etchers”,

    • It can be processed in any etcher in the fab.
    • I need to consult with staff to determine the appropriate etcher.
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About This Quiz

Embark on a specialized journey into semiconductor fabrication with our Plasma-Therm ICP Metal Dry Etch Tool Quiz. Tailored for engineers, researchers, and enthusiasts in the field of microfabrication, this quiz unravels the intricacies of the Plasma-Therm Inductively Coupled Plasma (ICP) Metal Dry Etch Tool.

Challenge yourself with questions that delve into the operational principles, applications, and advanced features of this cutting-edge tool. Whether you're a seasoned professional or a student aiming to grasp the nuances of semiconductor processing, this quiz provides an engaging platform to test and enhance your knowledge.

From understanding plasma generation to optimizing metal etching processes, each question is crafted to elevate your proficiency in utilizing the Plasma-Therm ICP Metal Dry Etch Tool. Take the quiz and unlock the secrets to precision in metal dry etching for semiconductor device fabrication.

Plasma-therm Icp Metal Dry Etch Tool Quiz - Quiz

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  • 2. 

    Plasma etching is always anisotropic. True or False?

    • True

    • False

    Correct Answer
    A. False
    Explanation
    Plasma etching is not always anisotropic. Anisotropic etching refers to a process that removes material more quickly in one direction than in others, resulting in a specific shape or pattern. While plasma etching can be anisotropic, it can also be isotropic, which means it removes material uniformly in all directions. Therefore, the statement that plasma etching is always anisotropic is false.

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  • 3. 

    In PT-MTL, when you press “Start Job” what are the resulting actions if neither "Vent After Job" nor "Process in PM, No Transfer" have been selected?

    • Loadlock evacuated, wafer transferred to process chamber, processed with the selected recipe, wafer returned to load lock and load lock vented

    • Loadlock evacuated, wafer transferred to process chamber, processed with the selected recipe, wafer returned to load lock and load lock remains in vacuum

    Correct Answer
    A. Loadlock evacuated, wafer transferred to process chamber, processed with the selected recipe, wafer returned to load lock and load lock remains in vacuum
    Explanation
    When you press "Start Job" in PT-MTL and neither "Vent After Job" nor "Process in PM, No Transfer" have been selected, the loadlock will be evacuated, and the wafer will be transferred to the process chamber. The wafer will then be processed with the selected recipe. After the process is complete, the wafer will be returned to the load lock. However, in this scenario, the load lock will remain in a vacuum state.

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  • 4. 

    In PT-MTL, choosing "Vent" from the Jobs/Job Start Menu results in:

    • Venting the load lock

    • Venting the chamber

    • Venting the load lock and the chamber

    • None of the above

    Correct Answer
    A. Venting the load lock
    Explanation
    Choosing "Vent" from the Jobs/Job Start Menu in PT-MTL results in venting the load lock. This means that the air or gas inside the load lock is released, allowing for the removal of any residual gases or contaminants. Venting the load lock is a necessary step in ensuring a clean and controlled environment for the subsequent processes or operations that will take place in the chamber.

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  • 5. 

    If the etch selectivity of polysilicon to GaN is 5.3 for given etch process, which material etches faster?

    • Polysilicon

    • GaN

    Correct Answer
    A. Polysilicon
    Explanation
    The etch selectivity of polysilicon to GaN is 5.3, which means that polysilicon etches 5.3 times faster than GaN. Therefore, the material that etches faster in this given etch process is polysilicon.

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  • 6. 

    If you want an etch process that has very little or no damage due to ion bombardment, which is the best type of tool to use?

    • Downstream

    • RIE

    • ICP

    Correct Answer
    A. Downstream
    Explanation
    Downstream etching is the best type of tool to use if you want an etch process with very little or no damage due to ion bombardment. In downstream etching, the ions are generated remotely and then directed towards the substrate, minimizing the chances of ion damage. This is in contrast to RIE (Reactive Ion Etching) and ICP (Inductively Coupled Plasma) etching techniques, where ions are generated directly in the chamber and can cause damage to the substrate. Therefore, using a downstream etching tool would be the most suitable option for achieving a low-damage etch process.

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  • 7. 

    Aluminum etches in fluorine chemistry. True or False?

    • True

    • False

    Correct Answer
    A. False
    Explanation
    Aluminum does not etch in fluorine chemistry. This is because aluminum forms a protective oxide layer on its surface when exposed to air, which prevents further reaction with fluorine. Therefore, aluminum is not affected by fluorine and does not undergo etching in fluorine chemistry.

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  • 8. 

    In PT-MTL, pressing the "Stop" button on the top menu bar will immediately (choose all that apply):

    • Stop processing the wafer

    • Give an alarm

    • Vent the chamber

    • Bring the wafer out

    Correct Answer(s)
    A. Stop processing the wafer
    A. Give an alarm
    Explanation
    Pressing the "Stop" button on the top menu bar in PT-MTL will immediately stop processing the wafer and give an alarm.

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  • 9. 

    Can etch selectivity ever be less than 1?

    • Yes

    • No

    Correct Answer
    A. Yes
    Explanation
    Etch selectivity refers to the ratio of the etch rate of one material to another during a process. A selectivity of 1 means that both materials etch at the same rate. If the selectivity is less than 1, it means that the material being etched is etching faster than the other material. Therefore, it is possible for etch selectivity to be less than 1.

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  • 10. 

    Which species are present in a plasma (choose all that are correct): 

    • Ions

    • X-rays

    • Free electrons

    • Free radicals

    • Free neutron

    Correct Answer(s)
    A. Ions
    A. Free electrons
    A. Free radicals
    Explanation
    Plasma is a state of matter in which atoms or molecules are ionized, meaning they have lost or gained electrons, resulting in the presence of ions. Free electrons are also present in plasma as they are detached from their parent atoms. Free radicals, on the other hand, are highly reactive species with unpaired electrons. X-rays and free neutrons are not typically present in plasma.

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  • 11. 

    What is a reason for including chemical etching in the dry etching process? (choose all)

    • Increased selectivity

    • Less expensive

    • Decreased surface damage

    • Creating undercut

    • Consume ions

    Correct Answer(s)
    A. Increased selectivity
    A. Decreased surface damage
    A. Creating undercut
    Explanation
    Chemical etching is included in the dry etching process for several reasons. Firstly, it helps to increase selectivity, which means it selectively removes certain materials while leaving others intact. This is important for precise etching and patterning. Secondly, chemical etching can help to decrease surface damage, ensuring that the material being etched remains in good condition. Lastly, chemical etching can create undercuts, which are recessed areas beneath the surface, allowing for better adhesion of subsequent layers. However, it does not necessarily make the process less expensive or consume ions.

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  • 12. 

    How can ions contribute to anisotropic plasma etching (choose all)? 

    • Inhibitor removal

    • Recombination of species

    • Enhancing chemical etching

    • Providing free radicals

    • Charging the surface

    Correct Answer(s)
    A. Inhibitor removal
    A. Enhancing chemical etching
    Explanation
    Ions can contribute to anisotropic plasma etching by removing inhibitors, which are substances that hinder the etching process. This removal allows for a more efficient and effective etching process. Additionally, ions can enhance chemical etching by reacting with the surface and promoting chemical reactions that facilitate the etching process.

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Quiz Review Timeline (Updated): Nov 29, 2023 +

Our quizzes are rigorously reviewed, monitored and continuously updated by our expert board to maintain accuracy, relevance, and timeliness.

  • Current Version
  • Nov 29, 2023
    Quiz Edited by
    ProProfs Editorial Team
  • Jun 16, 2016
    Quiz Created by
    Mary Tang
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