Plasma-therm Icp Metal Dry Etch Tool Quiz
Embark on a specialized journey into semiconductor fabrication with our Plasma-Therm ICP Metal Dry Etch Tool Quiz. Tailored for engineers, researchers, and enthusiasts in the field of microfabrication, this quiz unravels the intricacies of the Plasma-Therm Inductively Coupled Plasma (ICP) Metal Dry Etch Tool.
Challenge yourself with questions that delve into the operational principles, applications, and advanced features of this cutting-edge tool. Whether you're a seasoned professional or a student aiming to grasp the nuances of semiconductor processing, this quiz provides an engaging platform to test and enhance your knowledge.
From understanding plasma generation to optimizing metal etching processes, each Read morequestion is crafted to elevate your proficiency in utilizing the Plasma-Therm ICP Metal Dry Etch Tool. Take the quiz and unlock the secrets to precision in metal dry etching for semiconductor device fabrication.
- 1.
Aluminum etches in fluorine chemistry. True or False?
- A.
True
- B.
False
Correct Answer
B. FalseExplanation
Aluminum does not etch in fluorine chemistry. This is because aluminum forms a protective oxide layer on its surface when exposed to air, which prevents further reaction with fluorine. Therefore, aluminum is not affected by fluorine and does not undergo etching in fluorine chemistry.Rate this question:
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- 2.
Plasma etching is always anisotropic. True or False?
- A.
True
- B.
False
Correct Answer
B. FalseExplanation
Plasma etching is not always anisotropic. Anisotropic etching refers to a process that removes material more quickly in one direction than in others, resulting in a specific shape or pattern. While plasma etching can be anisotropic, it can also be isotropic, which means it removes material uniformly in all directions. Therefore, the statement that plasma etching is always anisotropic is false.Rate this question:
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- 3.
In PT-MTL, choosing "Vent" from the Jobs/Job Start Menu results in:
- A.
Venting the load lock
- B.
Venting the chamber
- C.
Venting the load lock and the chamber
- D.
None of the above
Correct Answer
A. Venting the load lockExplanation
Choosing "Vent" from the Jobs/Job Start Menu in PT-MTL results in venting the load lock. This means that the air or gas inside the load lock is released, allowing for the removal of any residual gases or contaminants. Venting the load lock is a necessary step in ensuring a clean and controlled environment for the subsequent processes or operations that will take place in the chamber.Rate this question:
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- 4.
In PT-MTL, pressing the "Stop" button on the top menu bar will immediately (choose all that apply):
- A.
Stop processing the wafer
- B.
Give an alarm
- C.
Vent the chamber
- D.
Bring the wafer out
Correct Answer(s)
A. Stop processing the wafer
B. Give an alarmExplanation
Pressing the "Stop" button on the top menu bar in PT-MTL will immediately stop processing the wafer and give an alarm.Rate this question:
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- 5.
Which species are present in a plasma (choose all that are correct):
- A.
Ions
- B.
X-rays
- C.
Free electrons
- D.
Free radicals
- E.
Free neutron
Correct Answer(s)
A. Ions
C. Free electrons
D. Free radicalsExplanation
Plasma is a state of matter in which atoms or molecules are ionized, meaning they have lost or gained electrons, resulting in the presence of ions. Free electrons are also present in plasma as they are detached from their parent atoms. Free radicals, on the other hand, are highly reactive species with unpaired electrons. X-rays and free neutrons are not typically present in plasma.Rate this question:
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- 6.
If a certain material is not listed in the “Table of Available Etchers”,
- A.
It can be processed in any etcher in the fab.
- B.
I need to consult with staff to determine the appropriate etcher.
Correct Answer
B. I need to consult with staff to determine the appropriate etcher.Explanation
If a certain material is not listed in the "Table of Available Etchers", it means that there is no specific information about which etcher should be used for that material. Therefore, the appropriate etcher for that material cannot be determined without consulting with the staff.Rate this question:
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- 7.
If the etch selectivity of polysilicon to GaN is 5.3 for given etch process, which material etches faster?
- A.
Polysilicon
- B.
GaN
Correct Answer
A. PolysiliconExplanation
The etch selectivity of polysilicon to GaN is 5.3, which means that polysilicon etches 5.3 times faster than GaN. Therefore, the material that etches faster in this given etch process is polysilicon.Rate this question:
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- 8.
Can etch selectivity ever be less than 1?
- A.
Yes
- B.
No
Correct Answer
A. YesExplanation
Etch selectivity refers to the ratio of the etch rate of one material to another during a process. A selectivity of 1 means that both materials etch at the same rate. If the selectivity is less than 1, it means that the material being etched is etching faster than the other material. Therefore, it is possible for etch selectivity to be less than 1.Rate this question:
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- 9.
If you want an etch process that has very little or no damage due to ion bombardment, which is the best type of tool to use?
- A.
Downstream
- B.
RIE
- C.
ICP
Correct Answer
A. DownstreamExplanation
Downstream etching is the best type of tool to use if you want an etch process with very little or no damage due to ion bombardment. In downstream etching, the ions are generated remotely and then directed towards the substrate, minimizing the chances of ion damage. This is in contrast to RIE (Reactive Ion Etching) and ICP (Inductively Coupled Plasma) etching techniques, where ions are generated directly in the chamber and can cause damage to the substrate. Therefore, using a downstream etching tool would be the most suitable option for achieving a low-damage etch process.Rate this question:
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- 10.
How can ions contribute to anisotropic plasma etching (choose all)?
- A.
Inhibitor removal
- B.
Recombination of species
- C.
Enhancing chemical etching
- D.
Providing free radicals
- E.
Charging the surface
Correct Answer(s)
A. Inhibitor removal
C. Enhancing chemical etchingExplanation
Ions can contribute to anisotropic plasma etching by removing inhibitors, which are substances that hinder the etching process. This removal allows for a more efficient and effective etching process. Additionally, ions can enhance chemical etching by reacting with the surface and promoting chemical reactions that facilitate the etching process.Rate this question:
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- 11.
What is a reason for including chemical etching in the dry etching process? (choose all)
- A.
Increased selectivity
- B.
Less expensive
- C.
Decreased surface damage
- D.
Creating undercut
- E.
Consume ions
Correct Answer(s)
A. Increased selectivity
C. Decreased surface damage
D. Creating undercutExplanation
Chemical etching is included in the dry etching process for several reasons. Firstly, it helps to increase selectivity, which means it selectively removes certain materials while leaving others intact. This is important for precise etching and patterning. Secondly, chemical etching can help to decrease surface damage, ensuring that the material being etched remains in good condition. Lastly, chemical etching can create undercuts, which are recessed areas beneath the surface, allowing for better adhesion of subsequent layers. However, it does not necessarily make the process less expensive or consume ions.Rate this question:
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- 12.
In PT-MTL, when you press “Start Job” what are the resulting actions if neither "Vent After Job" nor "Process in PM, No Transfer" have been selected?
- A.
Loadlock evacuated, wafer transferred to process chamber, processed with the selected recipe, wafer returned to load lock and load lock vented
- B.
Loadlock evacuated, wafer transferred to process chamber, processed with the selected recipe, wafer returned to load lock and load lock remains in vacuum
Correct Answer
B. Loadlock evacuated, wafer transferred to process chamber, processed with the selected recipe, wafer returned to load lock and load lock remains in vacuumExplanation
When you press "Start Job" in PT-MTL and neither "Vent After Job" nor "Process in PM, No Transfer" have been selected, the loadlock will be evacuated, and the wafer will be transferred to the process chamber. The wafer will then be processed with the selected recipe. After the process is complete, the wafer will be returned to the load lock. However, in this scenario, the load lock will remain in a vacuum state.Rate this question:
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Our quizzes are rigorously reviewed, monitored and continuously updated by our expert board to maintain accuracy, relevance, and timeliness.
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Current Version
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Nov 29, 2023Quiz Edited by
ProProfs Editorial Team -
Jun 16, 2016Quiz Created by
Mary Tang
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