Production Of Solar Grade Silicon

12 Questions | Total Attempts: 21

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Production Of Solar Grade Silicon


Questions and Answers
  • 1. 
    Name
  • 2. 
    USN
  • 3. 
    This is not the Property of Si 
    • A. 

      Silicon has 4 valence electrons to form four covalent bonds with its four neighbors.

    • B. 

      Sillicon is a semiconductor with a band gap of 1.12eV at 250C.

    • C. 

      Silicon can neither contract on melting nor expand on heating

    • D. 

      Silicon is brittle when alloyed with small quantities of impurities

    • E. 

      Si can be easily doped with n type and p type impurities

  • 4. 
    Purity level requirement for solar grade silicon is 
    • A. 

      Much higher than metallurgical grade Silicon

    • B. 

      Much Lower than metallurgical grade Silicon

    • C. 

      Lower than semiconductor grade silicon.

    • D. 

      Much higher than semiconductor grade silicon.

  • 5. 
    Production of metallurgical grade silicon involves
    • A. 

      Refining  of Silica by adding sand and lime stone

    • B. 

      Heating sand at 1500-2000 degree Celsius

    • C. 

      Reduction of  Quartz  in presence of Coke in an electric furnace

    • D. 

      Purification by fractional distillation

  • 6. 
    Production of Solar Grade Silicon by Chemical Vapour Deposition Method involves
    • A. 

      Preparation of volatile silane (SiH4) from metallurgical grade silicon 

    • B. 

      Purification by fractional distillation

    • C. 

      Reduction of  Quartz  in presence of Coke in an electric furnace

    • D. 

      Decomposition of pure silane (SiH4) to yield Ultra pure silicon.

  • 7. 
    Rod of high purity silicon  is obtained by 
    • A. 

      Purification by fractional distillation

    • B. 

      Reduction of  Quartz  in presence of Coke in an electric furnace

    • C. 

      Decomposition of pure silane (SiH4) to yield Ultra pure silicon.

    • D. 

      Zone Refining

  • 8. 
    Zone Refining Involves 
    • A. 

      Rod of silicon is clamped vertically and heated by a heating coil in a reducing atmosphere. 

    • B. 

      The heating coil is moves from top to bottom which will melt the silicon

    • C. 

      Impurities get swept to the end of the rod with the molten material

    • D. 

      All these 

  • 9. 
    Principle Involved in Zone Refining 
    • A. 

      Impurities are removed  by a vertically moving  heating coil

    • B. 

      Impurities being more soluble get swept to the end of the rod with the molten material .

    • C. 

      Option 4

  • 10. 
    When Silane is  heated on Silicon rods, silane decomposes to 
    • A. 

      H2SiCl2.

    • B. 

      4 H SiCl3

    • C. 

      Si + 2H2

    • D. 

      SiCl4

  • 11. 
    Product formed on Hydrogenation of tetrachloro silane (SiCl4) is 
    • A. 

      H2SiCl2.

    • B. 

      4 H SiCl3

    • C. 

      Si + 2H2

    • D. 

      SiCl4

  • 12. 
    When trichloro silane (HSiCl3) is passed through a fixed bed column filled with quaternary ammonium ion – exchange resin acting as Catalyst. HSiCl3 is converted to
    • A. 

      H2SiCl2.

    • B. 

      4 H SiCl3

    • C. 

      Si + 2H2

    • D. 

      SiCl4

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