BSNL TTA Online Mock 3
BSNL TTA Online Mock 3
The Questions give you a fair idea of the BSNL TTA Exam Question Paper Pattern and help you prepare better. The written examination consists of objective type paper including 3 parts that are as follows:
General Ability Test 20 questions 20 marks Basic Engineering 90 questions 90 marks Professional Knowledge 90 Read morequestions 90 marks
However Contemporary Test contains only 20 Question and Full Mock will available for Registered Users Total Question 20 Negative marking Yes 1/3
Total Duration 30 min By: Appliedjobz To download Previous year LIC,SBI,IBPS, Examination Papers
Please Visit https://appliedmocks. Blogspot. In
Total Marks -----------100
Questions and Answers
- 1.
Who Presides over the Joint Sitting of Lok Sabha and Rajya Sabha –
- A.
President
- B.
Speaker of Lok Sabha
- C.
Vice President
- D.
Prime Minister
Correct Answer
B. Speaker of Lok SabhaExplanation
The Speaker of Lok Sabha presides over the Joint Sitting of Lok Sabha and Rajya Sabha. The Joint Sitting is a special session of both houses of Parliament, called for the purpose of resolving a deadlock between the two houses on a particular bill. The Speaker, being the head of the Lok Sabha, is responsible for maintaining order and conducting the proceedings of the Joint Sitting.Rate this question:
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- 2.
Which service is not All India service –
- A.
IAS
- B.
IPS
- C.
IFS (Indian Foreign Service)
- D.
IFS (Indian Forest Service)
Correct Answer
C. IFS (Indian Foreign Service)Explanation
The Indian Foreign Service (IFS) is not an All India service because it is not governed by the rules and regulations of the All India Services Act. The IFS is responsible for diplomatic relations and foreign policy implementation, while the Indian Administrative Service (IAS), Indian Police Service (IPS), and Indian Forest Service (IFS) are All India services that are responsible for administrative, law enforcement, and forestry services respectively.Rate this question:
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- 3.
The member of U.P.S.C can be removed by
- A.
Parliament
- B.
Prime Minister
- C.
President
- D.
None of these
Correct Answer
C. PresidentExplanation
The President has the authority to remove a member of the Union Public Service Commission (UPSC). The UPSC is a constitutional body responsible for conducting examinations and appointments to the civil services of the Indian government. The President, being the head of state, holds the power to remove members of various constitutional bodies, including the UPSC. This ensures that the President has the ability to maintain the integrity and efficiency of the UPSC by removing any member who is found to be unfit for the position or involved in any misconduct.Rate this question:
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- 4.
Who is the protector of Fundamental Rights?
- A.
President
- B.
Supreme Court
- C.
Parliament
- D.
Prime Minister
Correct Answer
B. Supreme CourtExplanation
The Supreme Court is the protector of Fundamental Rights. As the highest judicial authority in the country, the Supreme Court has the power to interpret the Constitution and ensure that the fundamental rights of citizens are upheld. It has the authority to strike down any law or government action that violates these rights, making it the ultimate safeguard for protecting the fundamental rights of individuals.Rate this question:
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- 5.
Name of P.M. Who didn’t participate in Parliament session during his time period?
- A.
Charan Singh
- B.
Indra Kumar
- C.
A.B. vajpai
- D.
Indira Gandhi
Correct Answer
A. Charan SinghExplanation
Charan Singh is the correct answer because he served as the Prime Minister of India for a short period from July 1979 to January 1980. However, during his time as Prime Minister, he did not participate in any Parliament session. This lack of participation in parliamentary proceedings is a notable aspect of his tenure as Prime Minister.Rate this question:
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- 6.
How Many protons does the nucleus of Si atom contain?
- A.
4
- B.
14
- C.
28
- D.
38
Correct Answer
B. 14Explanation
The nucleus of a Si atom contains 14 protons. Protons are positively charged particles found in the nucleus of an atom. The atomic number of an element represents the number of protons in its nucleus, and for silicon (Si), the atomic number is 14. Therefore, the correct answer is 14.Rate this question:
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- 7.
Which is the most widely used semiconductor ?
- A.
Copper
- B.
Germanium
- C.
Silicon
- D.
None
Correct Answer
C. SiliconExplanation
Silicon is the most widely used semiconductor due to its abundance in nature, excellent electrical properties, and compatibility with existing manufacturing processes. It is widely used in the production of electronic devices such as transistors, diodes, and integrated circuits. Silicon's ability to efficiently control the flow of electrical current makes it an ideal material for the development of various electronic components, making it the preferred choice in the semiconductor industry.Rate this question:
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- 8.
An intrinsic semiconductor has some holes in it a room temperature. What causes these holes?
- A.
Doping
- B.
Free electrons
- C.
Thermal energy
- D.
Valance electron
Correct Answer
B. Free electronsExplanation
At room temperature, an intrinsic semiconductor can have some holes due to the presence of free electrons. These free electrons are generated by the thermal energy present in the material. As the temperature increases, more electrons gain enough energy to break free from their atomic bonds, leaving behind holes in the crystal lattice. These holes can then move through the material and act as charge carriers. Therefore, the correct answer is free electrons.Rate this question:
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- 9.
The merging of free electron and hole is called _________
- A.
Covalent Bonding
- B.
Life Time
- C.
Thermal Energy
- D.
Recombination
Correct Answer
D. RecombinationExplanation
When a free electron and a hole come together, they undergo a process called recombination. This occurs in semiconductors when an electron from the valence band fills a hole in the conduction band, resulting in the neutralization of both the electron and the hole. Recombination is an important phenomenon in electronic devices as it affects their overall performance and efficiency.Rate this question:
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- 10.
The amount of time between creation of hole and its disappearance is called __________.
- A.
Doping
- B.
Lifetime
- C.
Recombination
- D.
Valence Electron
Correct Answer
B. LifetimeExplanation
Lifetime refers to the duration or period of time between the creation of a hole and its disappearance. In the context of this question, the term "hole" is likely referring to a vacancy in the valence band of a semiconductor material. When an electron moves from the valence band to the conduction band, it leaves behind a hole. The lifetime of a hole is the time it takes for the hole to be filled or disappear, either through recombination with an electron or other processes. Therefore, lifetime is the appropriate term to describe the amount of time between the creation of a hole and its disappearance.Rate this question:
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- 11.
The Valence electron of a conductor is called _________ .
- A.
Bound electron
- B.
Free electron
- C.
Nucleus
- D.
Proton
Correct Answer
A. Bound electronExplanation
The valence electron of a conductor is called a bound electron. This is because in a conductor, the valence electrons are not freely moving and are bound to the atoms of the material. They are not able to move easily throughout the conductor and are instead localized around the atoms. This is in contrast to free electrons, which are able to move freely within a material and are typically found in conductors at higher energy levels. The nucleus and protons are not relevant to the valence electron in a conductor.Rate this question:
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- 12.
A conductor has how many type of flow ?
- A.
1
- B.
2
- C.
3
- D.
4
Correct Answer
A. 1 -
- 13.
A conductor has how many holes?
- A.
1
- B.
2
- C.
3
- D.
0
Correct Answer
D. 0Explanation
A conductor does not have any holes. A conductor is a material through which electricity can flow freely, and it does not contain any physical holes. Therefore, the correct answer is 0.Rate this question:
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- 14.
Mobility of free electrons in Si at 300 degree Kelvin in is
- A.
500
- B.
1300
- C.
1800
- D.
3800
Correct Answer
B. 1300Explanation
The mobility of free electrons in Si at 300 degrees Kelvin is 1300. The mobility of free electrons refers to their ability to move through a material in the presence of an electric field. In silicon, the mobility of free electrons is influenced by various factors such as impurities, temperature, and crystal structure. At 300 degrees Kelvin, the mobility of free electrons in silicon is determined to be 1300.Rate this question:
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- 15.
Mobility of free electrons in Ge at 300 degree Kelvin in is
- A.
500
- B.
1300
- C.
1800
- D.
3800
Correct Answer
D. 3800Explanation
The mobility of free electrons in Germanium at 300 degrees Kelvin is 3800.Rate this question:
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- 16.
Mobility of hole in Si at 300 degree Kelvin in is
- A.
500
- B.
1300
- C.
1800
- D.
3800
Correct Answer
A. 500Explanation
The mobility of a hole in Si at 300 degrees Kelvin is 500. Mobility refers to the ability of charge carriers (in this case, holes) to move through a material under the influence of an electric field. The given answer suggests that at 300 degrees Kelvin, the mobility of a hole in Si is 500, indicating that the holes can move relatively easily through the silicon material at this temperature.Rate this question:
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- 17.
Mobility of holes in Ge at 300 degree Kelvin in is
- A.
500
- B.
1300
- C.
1800
- D.
3800
Correct Answer
C. 1800Explanation
At 300 degrees Kelvin, the mobility of holes in Germanium (Ge) is 1800. Mobility refers to the ability of charge carriers (in this case, holes) to move through a material in the presence of an electric field. Germanium is a semiconductor material, and at higher temperatures, the mobility of charge carriers increases. Therefore, at 300 degrees Kelvin, the mobility of holes in Germanium is 1800.Rate this question:
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- 18.
Relative dielectric constant for Ge is _____.
- A.
12
- B.
14
- C.
16
- D.
20
Correct Answer
B. 14Explanation
The relative dielectric constant for Ge is 14.Rate this question:
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- 19.
Relative dielectric constant for Si is _____.
- A.
12
- B.
14
- C.
20
- D.
16
Correct Answer
A. 12Explanation
The relative dielectric constant for Si is 12. This value represents the ability of silicon to store electrical energy in comparison to a vacuum. A higher dielectric constant indicates a greater ability to store energy, while a lower value suggests a lesser ability. In the case of silicon, a relative dielectric constant of 12 suggests that it has a moderate ability to store electrical energy.Rate this question:
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- 20.
Mobility of charge carrier is _____ if V = velocity , and E = electric Field
- A.
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- B.
E
- C.
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- D.
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Correct Answer
A.Explanation
The mobility of a charge carrier is directly proportional to the electric field (E) and inversely proportional to the velocity (V). In other words, it is the ability of a charge carrier to move in response to an electric field. A higher electric field will result in a higher mobility, meaning the charge carrier can move more easily. Conversely, a higher velocity will decrease the mobility, as it becomes more difficult for the charge carrier to respond to the electric field.Rate this question:
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